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Seebeck Effect: Century-Old Limit Surpassed

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September 02, 2026

Prelims: Current events of national and international importance | Science & Technology.

Why in News?

Recently, Scientists from JNCASR, IISc & University of Sydney discovered a crystalline semiconductor that generates thermoelectric voltage far beyond the accepted limit.

  • Seebeck effect – It is the creation of an electrical voltage when two different metals or semiconductors have one end heated and the other end cooled.
  • Principle of Operation
    • Temperature Difference – Heat is applied to one junction of two joined, dissimilar materials, while the opposite junction remains at a lower temperature.
    • Electron Movement – Free electrons within the materials acquire thermal energy and exhibit increased mobility at the heated junction.
    • Voltage Generation – These fast-moving electrons diffuse toward the cooler side, creating a charge separation and a measurable voltage, known as the Seebeck voltage.
  • Previous Scientific Limitations – Historically, scientists considered the practical upper limit for crystalline solid materials to be only a few millivolts per Kelvin.
    • Metals – It typically exhibit Seebeck coefficients in the range of tens of microvolts per Kelvin (μV/K).
    • High-quality semiconductors – These are generally display Seebeck coefficients in the hundreds of microvolts per Kelvin (μV/K).
    • Certain liquid electrolytes and ionic systems – These can reach Seebeck coefficients in the millivolts per Kelvin (mV/K) range.
  • Recent Breakthrough – Modified scandium nitride (ScN) has demonstrated a Seebeck coefficient exceeding the previously established limits:
  • Specifically, a value of −124.6 millivolts per Kelvin (mV/K) was observed near room temperature.
  • This value significantly surpasses the previously accepted upper limit for crystalline inorganic solids.

How was this scientific outcome achieved?

  • The researchers utilized Scandium Nitride (ScN) as the base material.
  • Magnesium dopants were intentionally introduced into the ScN.

Doping is the intentional introduction of a small quantity of another element to alter the electrical properties of a semiconductor.

  • The combination of ScN and magnesium results in heavy doping and charge compensation.
  • This process produces a material known as HDHC (Heavily Doped, Highly Compensated) semiconductor.

application  of sideeffect upsc

Reference

PIB | Century-Old Limit on Turning Heat into Electricity

 

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